Single Frequency Blue Lasers


Owing to increased performance capabilities over their LED counterparts, Gallium Nitride (GaN) based Laser Diodes (LDs) are becoming more prevalent in several applications, including lighting, visible light communications, medical spectroscopy, and atom cooling. For many of these applications, a tunable, precise wavelength is necessary such that chromatic aberrations are minimized and that specific wavelengths with narrow linewidth can be utilized for atomic transitions or filtered communications systems. This paper discusses one method of achieving single-mode lasing operation in GaN LDs, namely the deeply-etched sidewall grating Distributed Feedback (DFB) LD. Optical characteristics of such devices will be discussed, as well as their feasibility for optical communications.

S. Gwyn, S. Watson, M. Knapp, S. Viola, G. Giuliano, T. J. Slight, S. Stanczyk, S. Grzanka, C. Robinson, A. Yadav, K. E. Docherty, E. Rafailov, P. Perlin, S. P. Najda, M. Leszczynski, M. Haji, A. E. Kelly.

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Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

This paper uses a parameter extraction method to investigate key parameters in GaN-based DFBs, as well as spectral linewidth measurements. Single-wavelength blue laser diodes are becoming a topic of significant research interest and gaining a better understanding of the device performance will allow improvements in design and ultimately improve their use in a number of commercial applications. To the authors’ knowledge this is the first reporting of these parameters in GaN devices.

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