Science, Technology & Innovation Exhibition

KNT will be exhibiting at the Science, Technology & Innovation Exhibition held in Rutherford Appleton Laboratory, UK.

Please call by booth A41 to meet us and discuss your fabrication requirements.

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Scientific-Publications-Feb19
Publications

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

This paper uses a parameter extraction method to investigate key parameters in GaN-based DFBs, as well as spectral linewidth measurements. Single-wavelength blue laser diodes are becoming a topic of significant research interest and gaining a better understanding of the device performance will allow improvements in design and ultimately improve their use in a number of commercial applications. To the authors’ knowledge this is the first reporting of these parameters in GaN devices.

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